CEM4311
50
40
30
20
50
40
30
20
10
0
-VGS=10,8,7,6,5V
-VGS=4V
25 C
10
0
-VGS=3V
TJ=125 C
2
-55 C
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
3
4
6
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
3600
3000
2400
1800
1200
600
ID=-7A
VGS=-10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5 - 18
CET [ CHINO-EXCEL TECHNOLOGY ]
