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CEM4269_10 参数 Datasheet PDF下载

CEM4269_10图片预览
型号: CEM4269_10
PDF下载: 下载PDF文件 查看货源
内容描述: 双增强模式场效应晶体管( N和P沟道) [Dual Enhancement Mode Field Effect Transistor (N and P Channel)]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 7 页 / 600 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEM4269_10的Datasheet PDF文件第1页浏览型号CEM4269_10的Datasheet PDF文件第2页浏览型号CEM4269_10的Datasheet PDF文件第3页浏览型号CEM4269_10的Datasheet PDF文件第5页浏览型号CEM4269_10的Datasheet PDF文件第6页浏览型号CEM4269_10的Datasheet PDF文件第7页  
CEM4269  
N-CHANNEL  
30  
20  
16  
12  
8
VGS=10,5V  
VGS=4.5V  
VGS=4.0V  
24  
18  
12  
25 C  
6
0
4
VGS=3.5  
V
-55 C  
TJ=125 C  
2.5  
0
2.0  
0
1
2
3
4
3.0  
3.5  
4.0  
4.5  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
1500  
1250  
1000  
750  
500  
250  
0
ID=6A  
VGS=10V  
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
-100  
-50  
0
50  
100  
150  
200  
VDS, Drain-to-Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 3. Capacitance  
Figure 4. On-Resistance Variation  
with Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
ID=250µA  
V
GS=0V  
101  
100  
10-1  
-50 -25  
0
25 50 75 100 125 150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ, Junction Temperature( C)  
VSD, Body Diode Forward Voltage (V)  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
4