CEM4204
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 32V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 3A
1
3
V
22
32
28
42
mΩ
mΩ
On-Resistance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
590
90
pF
pF
pF
VDS = 20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
60
td(on)
tr
td(off)
tf
10
3
20
6
ns
ns
VDD = 20V, ID = 6A,
VGS = 10V, RGEN = 3Ω
Turn-On Rise Time
Turn-Off Delay Time
26
4
52
8
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
13
1.7
3.5
16.9
nC
nC
nC
VDS = 20V, ID = 6A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
7.3
1.2
A
V
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
