CEM4269
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-40
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -2A
VDS = -5V, ID = -4.8A
-1
-3
43
65
V
mΩ
mΩ
S
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
3
Ciss
Coss
Crss
1115
205
pF
pF
pF
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
120
td(on)
tr
td(off)
tf
12
5
25
10
80
20
26
ns
ns
VDD = -20V, ID = -5A,
VGS = -10V, RGEN = 3Ω
Turn-On Rise Time
Turn-Off Delay Time
40
10
20
3.3
4.1
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = -20V, ID = -5A,
VGS = -10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-1.0
-1.0
A
V
VSD
VGS = 0V, IS = -1.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
3
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