CEM3252
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7A
1.0
3.0
28
40
V
22
30
mΩ
mΩ
On-Resistance
VGS = 4.5V, ID = 3.5A
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
VDS = 15V, ID = 7A
4
S
Ciss
Coss
Crss
610
145
95
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
9
3
20
8
ns
ns
VDD = 15V, ID = 7A,
VGS = 10V, RGEN = 3Ω
Turn-On Rise Time
Turn-Off Delay Time
24
4
50
10
16
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
12.3
1.5
2.5
nC
nC
nC
VDS = 15V, ID = 7A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
2.3
1.2
A
V
VSD
VGS = 0V, IS = 2.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.RθJA is the sum of junction-to-case-ambient thermal resistance where the case tmermal reference is defined
as the solder mounting surface of the drain pins. RθJc is guaranteed by design while RθJA is determined by
the user's board design
.
2. 105CW when mounted
on a 0.4in 2 pad of 2 oz
copper
3. 125CW when mounted
on a minimun pad
1. 50CW when mounted
on a 1in 2 pad of 2 oz
copper
Scale 1 : 1 on letter size paper
f.Pulse Test : Pluse Width < 300us,Duty cycle <2%
2
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