Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7.6A, R
DS(ON)
= 22mΩ @V
GS
= 10V.
R
DS(ON)
= 33mΩ @V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D
1
8
D
1
7
CEM3178
PRELIMINARY
D
2
6
D
2
5
SO-8
1
1
S
1
2
G
1
3
S
2
4
G
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Limit
30
Units
V
V
A
A
W
±
20
7.6
30
2.0
Maximum Power Dissipation
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
62.5
C/W
Specification and data are subject to change without notice .
1
Rev 3. 2010.Apr
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
