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CEM3138 参数 Datasheet PDF下载

CEM3138图片预览
型号: CEM3138
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 7 页 / 506 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEM3138的Datasheet PDF文件第1页浏览型号CEM3138的Datasheet PDF文件第2页浏览型号CEM3138的Datasheet PDF文件第3页浏览型号CEM3138的Datasheet PDF文件第4页浏览型号CEM3138的Datasheet PDF文件第6页浏览型号CEM3138的Datasheet PDF文件第7页  
CEM3138  
CHANNEL 2  
40  
25  
20  
15  
10  
5
25 C  
VGS=10,6,4.5V  
VGS=4.0V  
VGS=3.5V  
VGS=3.0V  
30  
20  
10  
5
TJ=125 C  
-55 C  
VGS=2.5V  
3
0
0
0
1
2
4
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 7. Output Characteristics  
Figure 8. Transfer Characteristics  
1200  
1000  
800  
600  
400  
200  
0
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
ID=6.3A  
VGS=10V  
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
-100  
-50  
0
50  
100  
150  
200  
VDS, Drain-to-Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 9. Capacitance  
Figure 10. On-Resistance Variation  
with Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
ID=250µA  
V
GS=0V  
101  
100  
10-1  
-50 -25  
0
25 50 75 100 125 150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ, Junction Temperature( C)  
VSD, Body Diode Forward Voltage (V)  
Figure 11. Gate Threshold Variation  
with Temperature  
Figure 12. Body Diode Forward Voltage  
Variation with Source Current  
5