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CEM2939 参数 Datasheet PDF下载

CEM2939图片预览
型号: CEM2939
PDF下载: 下载PDF文件 查看货源
内容描述: 双增强模式场效应晶体管( N和P沟道) [Dual Enhancement Mode Field Effect Transistor (N and P Channel)]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 7 页 / 459 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEM2939  
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted  
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics c  
BVDSS  
IDSS  
VGS = 0V, ID = -250µA  
VDS = -16V, VGS = 0V  
VGS = 12V, VDS = 0V  
VGS = -12V, VDS = 0V  
-20  
V
-1  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
Gate Threshold Voltage  
Static Drain-Source  
VGS(th)  
RDS(on)  
VGS = VDS, ID = -250µA -0.55  
VGS = -4.5V, ID = -3.2A  
-1.5  
55  
V
43  
64  
m  
mΩ  
On-Resistance  
VGS = -2.5V, ID = -1.0A  
90  
Dynamic Characteristics d  
Forward Transconductance  
Input Capacitance  
gFS  
Ciss  
Coss  
Crss  
VDS = -5V, ID = -5.5A  
10  
1155  
205  
120  
S
pF  
pF  
pF  
VDS = -10V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics d  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
13.4  
8.4  
26.8  
16.8  
146.8  
68.8  
13  
ns  
ns  
VDD = -10V, ID = -4A,  
VGS = -4.5V, RGEN = 3Ω  
Turn-On Rise Time  
Turn-Off Delay Time  
73.4  
34.4  
9.8  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
Qg  
nC  
nC  
nC  
VDS = -10V, ID = -4A,  
VGS = -4.5V  
Gate-Source Charge  
Qgs  
Qgd  
1.2  
Gate-Drain Charge  
2.7  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current b  
Drain-Source Diode Forward Voltage c  
IS  
-4.8  
-1.2  
A
V
VSD  
VGS = 0V, IS = -2.0A  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Surface Mounted on FR4 Board, t < 10 sec.  
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
d.Guaranteed by design, not subject to production testing.  
3