CEM2187
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
-20
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -0.4
VGS = -4.5V, ID = -7.6A
VGS = -2.5V, ID = -6A
-1.3
22
V
17
24
mΩ
mΩ
Static Drain-Source
On-Resistance
32
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
VDS = -9V, ID = -7.6A
32
2805
505
395
S
Ciss
Coss
Crss
pF
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
20
18
40
36
ns
ns
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
89
178
98
ns
49
ns
Total Gate Charge
Qg
31.5
3.8
8.8
41
nC
nC
nC
VDS = -6V, ID = -7.6A,
VGS = -4.5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-7.6
-1.2
A
V
VSD
VGS = 0V, IS = -2.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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