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CEM2187 参数 Datasheet PDF下载

CEM2187图片预览
型号: CEM2187
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 442 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEM2187  
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted  
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics c  
BVDSS  
IDSS  
VGS = 0V, ID = -250µA  
VDS = -20V, VGS = 0V  
VGS = 12V, VDS = 0V  
VGS = -12V, VDS = 0V  
-20  
V
-1  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
Gate Threshold Voltage  
VGS(th)  
RDS(on)  
VGS = VDS, ID = -250µA -0.4  
VGS = -4.5V, ID = -7.6A  
VGS = -2.5V, ID = -6A  
-1.3  
22  
V
17  
24  
m  
mΩ  
Static Drain-Source  
On-Resistance  
32  
Dynamic Characteristics d  
Forward Transconductance  
Input Capacitance  
gFS  
VDS = -9V, ID = -7.6A  
32  
2805  
505  
395  
S
Ciss  
Coss  
Crss  
pF  
pF  
pF  
VDS = -10V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics d  
Turn-On Delay Time  
Turn-On Rise Time  
td(on)  
tr  
td(off)  
tf  
20  
18  
40  
36  
ns  
ns  
VDD = -6V, ID = -1A,  
VGS = -4.5V, RGEN = 6Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
89  
178  
98  
ns  
49  
ns  
Total Gate Charge  
Qg  
31.5  
3.8  
8.8  
41  
nC  
nC  
nC  
VDS = -6V, ID = -7.6A,  
VGS = -4.5V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current b  
Drain-Source Diode Forward Voltage c  
IS  
-7.6  
-1.2  
A
V
VSD  
VGS = 0V, IS = -2.5A  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Surface Mounted on FR4 Board, t < 10 sec.  
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
d.Guaranteed by design, not subject to production testing.  
2