CEP655N/CEB655N
CEI655N/CEF655N
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 150V, VGS = 0V
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
150
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8.2A
2
4
V
mΩ
S
118
5
153
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 40V, ID = 8.2A
Ciss
Coss
Crss
750
175
70
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
17
48
40
46
26
6
35
100
80
ns
ns
VDD = 75V, ID = 15A,
VGS = 10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
90
ns
Total Gate Charge
Qg
34
nC
nC
nC
VDS = 120V, ID = 15A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
12.5
Drain-Source Diode Characteristics and Maximun Ratings
f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
15
A
V
VSD
VGS = 0V, IS = 15A g
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package I
= 10A .
S(max)
g.Full package V test condition I = 10A .
SD
S
2
CET [ CHINO-EXCEL TECHNOLOGY ]
