CEH2316
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = 20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
1.0
3.0
34
50
V
27
36
mΩ
mΩ
On-Resistance
VGS = 4.5V, ID = 4.9A
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 15V, ID = 6A
8
S
8
610
145
95
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
9
3
20
8
ns
ns
VDD = 15V, ID = 5.5A,
VGS = 10V, RGEN = 3Ω
Turn-On Rise Time
Turn-Off Delay Time
24
4
50
10
16
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
12.3
1.5
2.5
nC
nC
nC
VDS = 15V, ID = 6A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
1.7
1.2
A
V
VSD
VGS = 0V, IS = 1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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