CEH2310
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 6.2A , R
DS(ON)
= 33mΩ @V
GS
= 10V.
R
DS(ON)
= 38mΩ @V
GS
= 4.5V.
R
DS(ON)
= 55mΩ @V
GS
= 2.5V.
High dense cell design for extremely low R
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
5
6
3
2
1
TSOP-6
S(4)
G(3)
4
D(1,2,5,6,)
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
30
Units
V
V
A
A
W
C
±
12
6.2
25
2.0
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
