N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEPF640
CEBF640
CEFF640
V
DSS
200V
200V
200V
R
DS(ON)
0.15Ω
0.15Ω
0.15Ω
I
D
19A
19A
19A
d
CEPF640/CEBF640
CEFF640
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
G
G
D
S
G
CEP SERIES
TO-220
D
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
V
DS
V
GS
I
D
I
DM
e
P
D
T
J
,T
stg
19
76
125
1.0
200
TO-220F
Units
V
V
±
20
19
40
0.32
d
A
A
W
W/ C
C
76
d
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
1.0
62.5
Limit
3.1
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2008.Oct.
http://www.cetsemi.com