CEP9060N/CEB9060N
CEF9060N
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 55V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
55
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 62A
2
4
V
mΩ
S
8.5
30
10.5
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 25V, ID = 62A
Ciss
Coss
Crss
3695
765
60
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
24
11.9
60
48
23.8
120
38
ns
ns
VDD = 28V, ID = 62A,
VGS = 10V, RGEN = 4.5Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
19
ns
Total Gate Charge
Qg
68.1
12.6
22.7
90.5
nC
nC
nC
VDS = 44V, ID = 62A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
62
A
V
VSD
VGS = 0V, IS = 62A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, I = 50A, V = 24V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
2
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