欢迎访问ic37.com |
会员登录 免费注册
发布采购

CEF840L 参数 Datasheet PDF下载

CEF840L图片预览
型号: CEF840L
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 397 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEF840L的Datasheet PDF文件第1页浏览型号CEF840L的Datasheet PDF文件第3页浏览型号CEF840L的Datasheet PDF文件第4页  
CEP840L/CEB840L  
CEF840L  
Electrical Characteristics T = 25 C unless otherwise noted  
c
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics b  
BVDSS  
IDSS  
VGS = 0V, ID = 250µA  
VDS = 500V, VGS = 0V  
VGS = 20V, VDS = 0V  
VGS = -20V, VDS = 0V  
500  
V
25  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
Gate Threshold Voltage  
Static Drain-Source  
VGS(th)  
RDS(on)  
gFS  
VGS = VDS, ID = 250µA  
VGS = 10V, ID = 4.8A  
1
3
V
S
0.6  
7
0.8  
On-Resistance  
Forward Transconductance  
Dynamic Characteristics c  
Input Capacitance  
VDS = 50V, ID = 4.8A  
Ciss  
Coss  
Crss  
1240  
145  
20  
pF  
pF  
pF  
VDS = 25V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics c  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
20  
9
40  
18  
ns  
ns  
VDD = 250V, ID = 8A,  
VGS = 10V, RGEN = 9.1  
Turn-On Rise Time  
Turn-Off Delay Time  
48  
8
92  
ns  
Turn-Off Fall Time  
16  
ns  
43.8  
Total Gate Charge  
Qg  
33  
6.2  
13.9  
nC  
nC  
nC  
VDS = 400V, ID = 8A,  
VGS = 10V  
Gate-Source Charge  
Qgs  
Qgd  
Gate-Drain Charge  
Drain-Source Diode Characteristics and Maximun Ratings  
f
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage b  
IS  
8
A
V
VSD  
VGS = 0V, IS = 8A  
1.5  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature .  
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .  
c.Guaranteed by design, not subject to production testing.  
d.Limited only by maximum temperature allowed .  
e.Pulse width limited by safe operating area .  
f.Full package I  
= 4.6A .  
S(max)  
2
 复制成功!