CEP658N/CEB658N
CEF658N
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 160V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
180
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 16A
2
4
V
Static Drain-Source
0.2
0.22
Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 9A
10.8
760
155
60
S
Input Capacitance
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
17
32
90
38
25
5.4
12
35
60
ns
ns
VDD = 100V, ID = 11A,
VGS = 10V, RGEN = 9.1Ω
Turn-Off Delay Time
Turn-Off Fall Time
170
75
ns
ns
Total Gate Charge
Qg
32
nC
nC
nC
VDS = 160V, ID = 16A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
16
A
V
VSD
VGS = 0V, IS = 16A g
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package I
= 9.8A .
S(max)
2
CET [ CHINO-EXCEL TECHNOLOGY ]
