CEP09N7A/CEB09N7A
CEF09N7A
12
10
8
12
10
8
VGS=10,9,8,7V
VGS=6V
6
6
4
2
0
4
25 C
V
GS=5V
2
TJ=125C
-55 C
5
0
0
3
6
9
12
1
2
3
4
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
2400
2000
1600
1200
800
400
0
3.0
ID=8A
VGS=10V
C
iss
2.5
2.0
1.5
1.0
0.5
0.0
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.7
1.0
1.3
1.7
2.0
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
