CEP01N6/CEB01N6
CEI01N6/CEF01N6
2.5
1.5
1.2
0.9
0.6
0.3
0.0
25 C
VGS=10,9,8V
2.0
1.5
1.0
0.5
V
GS=6V
V
GS=5V
-55 C
TJ=125 C
0.0
0
5
10
15
20
25
1
2
3
4
5
6
7
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
240
200
160
120
80
ID=0.4A
VGS=10V
C
iss
C
oss
40
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
100
10-1
10-2
-50 -25
0
25 50 75 100 125 150
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
