CEDF640/CEUF640
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 160V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
200
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 10A
2
4
V
Ω
S
0.125
9
0.15
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 10V, ID = 9A
Ciss
Coss
Crss
1955
355
55
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
21
5
42
10
ns
ns
VDD = 100V, ID = 11A,
VGS = 10V, RGEN = 9.1Ω
Turn-On Rise Time
Turn-Off Delay Time
66
11
47
10
16
132
22
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
61
nC
nC
nC
VDS = 160V, ID = 15A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
15
A
V
VSD
VGS = 0V, IS = 15A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, I = 25A, V = 25V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
6 - 2