CED9926/CEU9926
1.15
1.30
1.20
ID=250ijA
V
DS=VGS
1.10
I
D
=250ijA
1.10
1.00
0.90
1.05
1.00
0.95
0.90
0.85
0.80
0.70
0.60
6
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
50
20
16
10
12
8
4
1.0
0.1
V
DS=10V
0
3
1.0
1.4
0
6
9
12
0.6
0.8
1.2
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5
2
10
I
D
=8A
V
DS=10V
10ms
mit
4
3
100ms
(ON)Li
1
0
RDS
10
10
1s
10s
DC
2
-1
10
T
įJA=
A
=25 C
50 C/W
Single Pulse
1
0
R
-2
10
2
-1
0
1
10
10
10
9
10
0
3
6
12
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
6-85