欢迎访问ic37.com |
会员登录 免费注册
发布采购

CED830G 参数 Datasheet PDF下载

CED830G图片预览
型号: CED830G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 393 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CED830G的Datasheet PDF文件第1页浏览型号CED830G的Datasheet PDF文件第2页浏览型号CED830G的Datasheet PDF文件第4页  
CED830G/CEU830G  
12  
10  
8
12  
10  
8
VGS=10,9,8,7V  
V
GS=6V  
6
6
4
4
25 C  
V
GS=4V  
2
2
TJ=125C  
-55 C  
0
0
0
2
4
6
8
10  
12  
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
900  
750  
600  
450  
300  
150  
0
ID=2.5A  
VGS=10V  
C
iss  
C
oss  
C
rss  
-100  
-50  
0
50  
100  
150  
200  
0
5
10  
15  
20  
25  
VDS, Drain-to-Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 3. Capacitance  
Figure 4. On-Resistance Variation  
with Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
ID=250µA  
V
GS=0V  
100  
10-1  
10-2  
-50 -25  
0
25 50 75 100 125 150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ, Junction Temperature( C)  
VSD, Body Diode Forward Voltage (V)  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
3
 复制成功!