CED6601/CEU6601
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-60
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -8A
VGS = -4.5V, ID = -6A
-1
-3
86
V
70
95
mΩ
mΩ
On-Resistance
125
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = -10V, ID = -15A
S
10
1130
120
70
pF
pF
pF
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
15
8
30
16
ns
ns
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
69
20
19.2
3.2
4
138
40
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
25.5
nC
nC
nC
VDS = -30V, ID = -3.5A,
VGS = -10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
-16
A
V
VSD
VGS = 0V, IS = -1.3A
-1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
