CED630N/CEU630N
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 160V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
200
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3.5A
2
4
V
0.30
0.36
Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 3.5A
4
S
930
130
25
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
ns
ns
24
15
116
25
19
3
48
30
VDD = 100V, ID = 5A,
VGS = 10V,RGEN = 50Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
232
50
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
24.7
VDS = 160V, ID = 5.9A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
7.5
1.5
A
V
VSD
VGS = 0V, IS = 7.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
