CED62A2/CEU62A2
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 18A
VGS = 2.5V, ID = 9A
0.5
1.2
12
17
V
10
13
mΩ
mΩ
Dynamic Characteristics c
gFS
Forwand Transconductance
Input Capacitance
VDS = 5V, ID = 18A
10
2600
430
310
S
Ciss
Coss
Crss
pF
pF
pF
VDS = 20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
17
12
55
30
35
4
35
25
ns
ns
VDD = 10V, ID = 18A,
VGS = 5V, RGEN = 3.3Ω
Turn-Off Delay Time
Turn-Off Fall Time
110
60
ns
ns
Total Gate Charge
Qg
45
nC
nC
nC
VDS = 20V, ID = 18A,
VGS = 5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
12
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
45
A
V
VSD
VGS = 0V, IS = 45A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
