CED6030L/CEU6030L
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 18A
VDS = 10V, ID = 26A
1
1.6
12
3
V
mΩ
mΩ
S
15.5
22
On-Resistance
18.5
32
Forwand Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
1315
525
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
110
td(on)
tr
td(off)
tf
10
190
55
130
19
5
16
250
90
ns
ns
VDD = 15V, ID = 40A,
VGS = 10V, RGEN = 24Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-On Fall Time
200
23
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 24V, ID = 40A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
9
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage bbbb
IS
40
A
V
VSD
VGS = 0V, IS = 26A
0.9
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
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