CED3700/CEU3700
20
16
12
8
25
25 C
VGS=10 thru 6V
20
15
10
5
V
GS=5V
V
GS=4V
4
0
-55 C
TJ=125 C
2
V
GS=3V
4
0
0
4
6
8
0
1
2
3
5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
300
250
200
150
100
50
ID=12A
VGS=10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
