CED12P10/CEU12P10
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -100V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
-100
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.7A
-2
-4
V
mΩ
S
275
3.5
315
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
VDS = -40V, ID = -4.7A
Ciss
Coss
Crss
565
115
28
pF
pF
pF
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
16
7
32
14
72
28
20
ns
ns
VDD = -50V, ID = -11A,
VGS = -10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
36
14
13
3.3
6.0
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = -80V, ID = -11A,
VGS = -10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-9
A
V
VSD
VGS = 0V, IS = -9A
-1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
