CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , R
DS(ON)
=5
Ω
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-251 & TO-252 package.
D
6
G
D
G
S
G
D
S
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous (Tc=25 C)
-Continuous (Tc=100 C)
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
@Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
Symbol
V
DS
V
GS
I
D
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
600
30
1.9
1.2
6
6
43
0.34
-55 to 150
Unit
V
V
A
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
6-77
R
JC
R
JA
2.9
50
C/W
C/W
CET [ CHINO-EXCEL TECHNOLOGY ]
