N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 1.6A, R
DS(ON)
= 6.75Ω @V
GS
= 10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED02N7G/CEU02N7G
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
D
G
S
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
@ T
C
= 100 C
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
d
d
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
Limit
700
Units
V
V
A
A
A
W
W/ C
mJ
A
C
±
30
1.6
1.1
6.4
48
0.38
11.25
1.5
-55 to 150
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
2.6
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2011.Jan
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
