CEP85N75/CEB85N75
CEF85N75
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
75
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 40A
2
4
V
Static Drain-Source
12
mΩ
10
On-Resistance
c
Dyna
mic C
hara
cteri
stics
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 15V, ID = 40A
45
3500
715
70
S
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
28
9
56
18
ns
ns
VDD = 37.5V, ID = 45A,
VGS = 10V, RGEN = 4.7Ω
Turn-Off Delay Time
Turn-Off Fall Time
83
10
90
19
23
166
20
ns
ns
Total Gate Charge
Qg
119
nC
nC
nC
VDS = 60V, ID = 75A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
86
A
V
VSD
VGS = 0V, IS = 40A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L =0.87mH, I =45A, V = 38V, R = 25Ω, Starting T = 25 C .
AS
DD
G
J
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
2
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