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CEB730G 参数 Datasheet PDF下载

CEB730G图片预览
型号: CEB730G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 416 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEB730G的Datasheet PDF文件第1页浏览型号CEB730G的Datasheet PDF文件第2页浏览型号CEB730G的Datasheet PDF文件第3页  
CEP730G/CEB730G  
CEF730G  
102  
10  
8
VDS=320V  
ID=3.5A  
RDS(ON)Limit  
100µs  
101  
1ms  
6
10ms  
DC  
4
100  
2
TC=25 C  
TJ=150 C  
Single Pulse  
10-1  
0
100  
101  
102  
103  
0
4
8
12  
16  
Qg, Total Gate Charge (nC)  
VDS, Drain-Source Voltage (V)  
Figure 7. Gate Charge  
Figure 8. Maximum Safe  
Operating Area  
VDD  
on  
t
toff  
d(off)  
t
r
t
d(on)  
OUT  
RL  
t
f
t
VIN  
90%  
10%  
90%  
D
OUT  
V
V
VGS  
10%  
INVERTED  
RGEN  
G
90%  
50%  
50%  
S
IN  
V
10%  
PULSE WIDTH  
Figure 10. Switching Waveforms  
Figure 9. Switching Test Circuit  
100  
D=0.5  
0.2  
0.1  
10-1  
0.05  
0.02  
0.01  
PDM  
t1  
t2  
Single Pulse  
10-2  
1. Rθ JC (t)=r (t) * Rθ JC  
2. Rθ JC=See Datasheet  
3. TJM-TC = P* Rθ JC (t)  
4. Duty Cycle, D=t1/t2  
10-3  
10-2  
10-1  
100  
101  
102  
103  
104  
Square Wave Pulse Duration (msec)  
Figure 11. Normalized Thermal Transient Impedance Curve  
4