CEP6336/CEB6336
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 10A
1
3
V
Static Drain-Source
30
35
40
50
mΩ
mΩ
On-Resistance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
750
110
70
pF
pF
pF
VDS = 30V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
16
5
32
10
76
12
29
ns
ns
VDD = 30V, ID = 4.4A,
VGS = 10V, RGEN = 1Ω
Turn-Off Delay Time
Turn-Off Fall Time
38
6
ns
ns
Total Gate Charge
Qg
22.2
32
4.7
nC
nC
nC
VDS = 30V, ID = 5.3A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
28
A
V
VSD
VGS = 0V, IS = 28A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2