CEP6060N/CEB6060N
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 24A
2
4
V
Static Drain-Source
25
mΩ
19
On-Resistance
c
Dyna
mic C
hara
cteri
stics
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 24A
40
1320
310
40
S
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
16
3
32
6
ns
ns
VDD = 30V, ID = 19A,
VGS = 10V, RGEN = 4.7Ω
Turn-Off Delay Time
Turn-Off Fall Time
36
4
72
8
ns
ns
Total Gate Charge
Qg
28.7
6.3
9.7
38.1
nC
nC
nC
VDS = 48V, ID = 38A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
42
A
V
VSD
VGS = 0V, IS = 24A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package I
= 42A .
S(max)
g.Full package V test condition I = 42A .
SD
S
h.L = 0.19mH, I = 42A, V = 50V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
2