CEP51A3/CEB51A3
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS , ID = 250µA
VGS = 10 V, ID = 20A
VGS = 4.5V, ID = 20A
VDS = 10 V, ID = 20A
1
3
V
13.5
20
16.5
28
Ω
m
Ω
m
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
26
S
Ciss
Coss
Crss
1340
232
82
pF
pF
pF
VDS = 25V , VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
16
4.4
31
4.5
13
4
40
13
62
14
23
ns
ns
VDD =15V, ID =20A,
VGS = 4.5V, RGEN =4.7Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 24V, ID =40A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
4
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
48
A
V
VSD
VGS = 0V, IS = 40A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
4 - 91
CET [ CHINO-EXCEL TECHNOLOGY ]
