CEP50N06/CEB50N06
120
100
80
60
40
20
0
125
V
GS=10V
25 C
V
V
V
GS=8V
100
75
50
25
0
GS=7V
GS=6V
V
GS=5V
GS=4V
-55 C
TJ=125 C
2
V
0
1
2
3
4
5
6
0
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.6
2.2
1.8
1.4
1.0
0.6
0.2
3000
2500
2000
1500
1000
500
ID=50A
VGS=10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.3
0.6
0.9
1.2
1.5
1.8
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
