CEP21A3/CEB21A3
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
4
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
V
V
SD
V
GS = 0V, Is = 12A
0.9
1.3
Notes
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
30
50
40
30
20
VGS=10,9,8,7,6V
25
25 C
VGS=5V
20
15
VGS=4V
10
-55 C
Tj=125 C
10
0
5
VGS=3V
0
0
1
2
3
4
5
6
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.80
600
ID=12A
VGS=10V
500
400
300
200
1.60
1.40
1.20
Ciss
Coss
1.00
100
0
0.80
0.60
Crss
0
5
10
15
20
25
30
0
100
125 150
-50 -25
50
75
25
VDS, Drain-to Source Voltage (V)
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
4-169
CET [ CHINO-EXCEL TECHNOLOGY ]
