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CEB21A3 参数 Datasheet PDF下载

CEB21A3图片预览
型号: CEB21A3
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平增强模式场效应晶体管 [N-Channel Logic Level Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 42 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEB21A3的Datasheet PDF文件第1页浏览型号CEB21A3的Datasheet PDF文件第2页浏览型号CEB21A3的Datasheet PDF文件第4页浏览型号CEB21A3的Datasheet PDF文件第5页  
CEP21A3/CEB21A3  
ELECTRICAL CHARACTERISTICS (T  
C
=25 C unless otherwise noted)  
4
Typ Max  
Parameter  
Condition  
Min  
Unit  
Symbol  
DRAIN-SOURCE DIODE CHARACTERISTICS a  
Diode Forward Voltage  
V
V
SD  
V
GS = 0V, Is = 12A  
0.9  
1.3  
Notes  
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.  
b.Guaranteed by design, not subject to production testing.  
30  
50  
40  
30  
20  
VGS=10,9,8,7,6V  
25  
25 C  
VGS=5V  
20  
15  
VGS=4V  
10  
-55 C  
Tj=125 C  
10  
0
5
VGS=3V  
0
0
1
2
3
4
5
6
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
VGS, Gate-to-Source Voltage (V)  
VDS, Drain-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
1.80  
600  
ID=12A  
VGS=10V  
500  
400  
300  
200  
1.60  
1.40  
1.20  
Ciss  
Coss  
1.00  
100  
0
0.80  
0.60  
Crss  
0
5
10  
15  
20  
25  
30  
0
100  
125 150  
-50 -25  
50  
75  
25  
VDS, Drain-to Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 4. On-Resistance Variation with  
Temperature  
Figure 3. Capacitance  
4-169