CEP1175/CEB1175
CEF1175
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
V
10
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5A
2
4
1
V
Static Drain-Source
Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 5V, ID = 10A
6
S
Input Capacitance
1760
165
20
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
19
6
38
12
ns
ns
VDD = 300V, ID = 10A,
VGS = 10V, RGEN = 10Ω
Turn-Off Delay Time
Turn-Off Fall Time
36
6
72
ns
12
ns
Total Gate Charge
Qg
30.2
9.4
8
40.1
nC
nC
nC
VDS = 480V, ID = 10A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
g
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
10
A
V
VSD
VGS = 0V, IS = 10A g
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package I
= 4.5A .
S(max)
2
CET [ CHINO-EXCEL TECHNOLOGY ]
