CEP09N7G/CEB09N7G
CEF09N7G
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
700
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4.5A
2
4
V
Static Drain-Source
0.85
1.0
Ω
On-Resistance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
1765
200
20
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
24
9
ns
ns
VDD = 200V, ID = 5A,
VGS = 10V, RGEN = 9.1Ω
Turn-Off Delay Time
Turn-Off Fall Time
72
ns
10
ns
Total Gate Charge
Qg
46
nC
nC
nC
VDS = 480V, ID = 5A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
6.7
18.5
Drain-Source Diode Characteristics and Maximun Ratings
f
IS
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
9
A
V
VSD
VGS = 0V, IS = 9A g
1.4
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package I
= 6A .
S(max)
g.Full package V test condition I = 6A .
SD
S
h.L = 15mH, I = 7.5A, V = 50V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
2
CET [ CHINO-EXCEL TECHNOLOGY ]
