CEP05N65/CEB05N65
CEF05N65
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2A
2
4
V
2
2.4
Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 40V, ID = 2A
4
S
590
85
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
20
td(on)
tr
td(off)
tf
17
16
47
17.5
13
2
34
32
ns
ns
VDD = 300V, ID = 4.5A,
VGS = 10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
94
35
Turn-Off Fall Time
ns
Total Gate Charge
Qg
17
nC
nC
nC
VDS = 480V, ID = 4.5A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
5
Drain-Source Diode Characteristics and Maximun Ratings
IS
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
4.5
1.5
A
V
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, I = 1.3A, V = 50V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
2