CEP04N7G/CEB04N7G
CEF04N7G
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
700
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2A
2
4
V
2.5
3.3
Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 40V, ID = 1A
2
S
595
80
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
20
td(on)
tr
td(off)
tf
18
17
40.5
19
14
3
36
34
ns
ns
VDD = 300V, ID = 4A,
VGS = 10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
81
38
Turn-Off Fall Time
ns
Total Gate Charge
Qg
18.2
nC
nC
nC
VDS = 480V, ID = 4A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
6
Drain-Source Diode Characteristics and Maximun Ratings
IS
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
2.5
1.5
A
V
VSD
VGS = 0V, IS = 2.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
2
CET [ CHINO-EXCEL TECHNOLOGY ]
