CEP01N65/CEB01N65
CEF01N65
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
V
25
10
µA
uA
uA
IGSSF
IGSSR
-10
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.6A
2.5
4.5
V
8.5
10.5
Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 0.6A
0.8
205
45
S
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
20
td(on)
tr
td(off)
tf
14.3
14.6
22.9
16.6
5.7
ns
ns
28.6
29.2
VDD = 300V, ID = 1.3A,
VGS = 10V, RGEN =4.7Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
45.8
33.2
Turn-Off Fall Time
ns
7.5
Total Gate Charge
Qg
nC
nC
nC
VDS = 480V, ID = 1.3A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
1.9
Gate-Drain Charge
2.4
Drain-Source Diode Characteristics and Maximun Ratings
f
IS
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
1.3
1.5
A
V
VGS = 0V, IS = 0.6A g
VSD
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package I
= 1A .
S(max)
g.Full package V test condition I = 1A .
SD
S
2
CET [ CHINO-EXCEL TECHNOLOGY ]
