CEA6861
10
8
5
4
3
2
1
0
25 C
-VGS=10,8,6,5V
6
4
-VGS=3.
0V
2
0
TJ=125 C
-55 C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1200
1000
800
600
400
200
0
ID=-2.4A
VGS=-10V
C
iss
C
oss
C
rss
0
6
12
18
24
30
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
