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S/CON/SOM040200/A/08/12/05
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Page 4/5 UK
PRELIMINARY DATA
CHARACTERISTIC CURVES
Fig. 5
INPUT CHARACTERISTIC
Fig. 6
RDSon
ON RESISTANCE VS JUNCTION TEMPERATURE
Ic (mADC)
50
60
50
40
30
20
10
0
-35°C
-35°C
(mOhms)
45
40
35
30
25
20
15
10
5
25°C
100°C
0
-50
0
50
100
150
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
Uc (VDC)
Junction Temperature (°C)
Fig. 7
POWER DISSIPATED AND LOAD CURRENT LIMIT VS TEMPERATURE
Permanent current
Ie (ARMS)
Power dissipated
(W)
Please refer to the installation notice for precautions
about mounting the device on a heatsink.
97,8
45
40
35
30
25
20
15
10
5
1.2K/W
1.1K/W
0.9K/W
0.75K/W
0.55K/W
0.3K/W
77,3
59.2
43.5
30.2
19.3
10.9
4.8
1.2
8K/W
4K/W
2.2K/W
2.1K/W
0
0
0
10
20
30
40
50
60
70
80
90
100
110
Ambient temperature (°C)
10K/W = No Heatsink
2.1K/W = WF210000
0.75K/W = WF070000
4K/W = 150x150x3mm aluminium sheet
1.2K/W = WF121000
2.2K/W = WF262100
1.1K/W = WF131100
0.3K/W = WF031100
2.2K/W = WF151200
0.9K/W = WF115100
0.55K/W = WF050000
Fig. 8
PEAK OVERLOAD CURRENT vs. PULSE DURATION CHARACTERISTIC
Ie 320
(Apk)
Non-repetitive D=1% (Tc=100°C, Tjmax=175°C)
280
240
200
160
120
80
Repetitive D=5% (Tc=100°C, Tjmax=175°C)
Repetitive D=10% (Tc=100°C, Tjmax=175°C)
Repetitive D=20% (Tc=100°C, Tjmax=175°C)
t1
t2
40
D
(
%
)
=
×100
Repetitive D=50% (Tc=100°C, Tjmax=125°C)
1
0
0,1
10
100
1000
Pulse duration (ms)
CELDUC [ celduc-relais ]
