PRELIMINARY DATA SHEET
NEC's InGaAsP
MQW-DFB LASER DIODE
IN CAN PACKAGE FOR
2.5 Gb/s, CWDM APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER
P
O
= 5.0 mW
• PEAK EMISSION WAVELENGTH
λ
p
= 1 470 to 1 610 nm
(Based on ITU-T recommendations)
• LOW THRESHOLD CURRENT
I
th
= 10 mA
• HIGH SPEED
t
r
= 100 ps MAX
• SIDE MODE SUPPRESSION RATIO
SMSR = 40 dB
• OPERATING CASE TEMPERATURE RANGE
T
C
= -20 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE
Ø
5.6 mm
• BASED ON TELCORDIA RELIABILITY
NX6508
Series
DESCRIPTION
NEC's NX6508 Series are 1 470 to 1 610 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back
(DFB) laser diode with InGaAs monitor PIN-PD. These
devices are ideal for 2.5 Gb/s CWDM application.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -20 to +85°C, unless otherwise specified)
PART NUMBER
SYMBOLS
P
o
V
op
I
th
PARAMETER AND CONDITIONS
Optical Output Power from Fiber, CW
Operating Voltage, P
o
= 5.0 mW
Threshold Current, T
C
= 25°C
UNIT
mW
V
mA
NX6508 SERIES
MIN.
TYP.
5.0
1.1
10
1.6
20
50
η
d
Differential Efficiency
P
o
= 5.0 mW, T
C
= 25°C
P
o
= 5.0 mW
Δη
d
Temperature Dependence of Differential Efficiency
Δη
d
= 10 log
λ
p
Δλ/ΔT
SMSR
t
r
η
d
(@ T
C
°C)
η
d
(@ 25°C)
nm
nm/°C
dB
ps
λ
p
−2
0.08
30
λ
p
*1
0.1
40
100
λ
p
+2
0.12
dB
W/A
0.18
0.10
−3.0
−1.6
0.25
MAX.
Peak Emission Wavelength, P
o
= 5.0 mW
Temperature Dependence of Peak Emission Wavelength, CW
Side Mode Suppression Ratio, P
o
= 5.0 mW
Rise Time, 20-80%, P
o
= 5.0 mW
Continued on next page
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
