LASER DIODE
NX5315EH
1 310 nm FOR FTTH PON APPLICATION
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5315EH is a 1 310 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is
designed for application up to 1.25 Gb/s.
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
• Optical output power
• Low threshold current
• Differential Efficiency
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P
o
= 13.0 mW
l
th
= 6 mA
η
d
= 0.5 W/A
• Wide operating temperature range T
C
=
−40
to +85°C
φ
5.6 mm
6.35 mm
Document No. PL10531EJ03V0DS (3rd edition)
Date Published July 2006 NS CP(K)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
CEL [ CALIFORNIA EASTERN LABS ]
