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NX5311GH 参数 Datasheet PDF下载

NX5311GH图片预览
型号: NX5311GH
PDF下载: 下载PDF文件 查看货源
内容描述: 1310纳米的InGaAsP多量子阱FP激光二极管可以包1.25 Gb / s和FTTH PON应用 [1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS]
分类和应用: 光纤二极管激光二极管
文件页数/大小: 4 页 / 161 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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PRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE
NX5311 SERIES
FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
P
o
= 10.0 mW
• LOW THRESHOLD CURRENT :
I
th
= 6 mA
• DIFFERENTIAL EFFICIENCY:
η
d
=0.50 W/A
• WIDE OPERATING TEMPERATURE RANGE:
T
C
= -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
7.5 mm
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
DESCRIPTION
NEC's NX5311 Series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. These devices are designed for application
up to 1.25 Gb/s.
California Eastern Laboratories