NEZ7785-8D 参数 Datasheet PDF下载

C-BAND INTERNALLY

MATCHED POWER GaAs MESFET

FEATURES

•

HIGH P

OUT

18W (42.5 dBm) Typ P

1dB

for NEZ7785-15D/15DL

9W (39.5 dBm) Typ P

1dB

for NEZ7785-8D/8DL

4.5W (36.5 dbm) Typ P

1dB

for NEZ7785-4D/4DL

HIGH EFFICIENCY

33%

η

ADD

for 4.5W Device

31%

η

ADD

for 9W Device

30%

η

ADD

for 18W Device

LOW IMD

-45 dBc IM3 @ 31.5 dBm (SCL) -15DL

-45 dBc IM3 @ 29 dBm P

OUT

(SCL) -8DL

-45 dBc IM3 @ 26 dBm P

OUT

(SCL) -4DL

SiO

2

PASSIVATED CHIP

For Power/Gain Stability Under RF Overdrive

CLASS A OPERATION

INTERNALLY MATCHED (IN/OUT)

SUPERIOR GAIN FLATNESS

INDUSTRY COMPATIBLE HERMETIC PACKAGES

= 25°C)

NEZ7785-4D

NEZ7785-4DL

T-61

UNITS MIN

dBm

dBm

dBm

%

A

dB

Distortion

3

35.5

NEZ7785-8D

NEZ7785-8DL

T-61

PART NUMBER

PACKAGE OUTLINE

SYMBOLS

P

1dB

PARAMETERS AND CONDITIONS

Output Power at P

1dB1

I

DSQ

= 0.8A, (RF Off)

I

DSQ

= 1.6A

I

DSQ

= 4.0 A

Power Added Efficiency @ P

1dB

Drain Current at P

1dB

Linear Gain

3rd Order Intermodulation

at

P

OUT

= 26 dBm SCL

2

I

DSQ

= 0.5 x I

DSS

P

OUT

= 29 dBm SCL

2

I

DSQ

= 0.5 x I

DSS

P

OUT

= 31.5 dBm SCL

2

I

DSQ

= 0.5 x I

DSS

Saturated Drain Current, V

GS

= 0 V

Pinch Off Voltage

I

DS

= 15 mA

I

DS

= 30 mA

I

DS

= 60 mA

Transconductance

I

DS

= I A

I

DS

= 2 A

I

DS

= 4A

Drain - Gate Breakdown Voltage

I

DG

= 15 mA

I

DG

= 30 mA

I

DG

= 60 mA

Thermal Resistance (Channel to Case)

Channel Temperature Rise

4

45

NEZ7785-15D

NEZ7785-15DL

NEZ7785-8D

NEZ7785-8DL

NEZ7785-4D

NEZ7785-4DL

OUTPUT POWER AND EFFICIENCY

vs. INPUT POWER

100%

Output Power, P

OUT

(dBm)

40

-4D

Pout

35

-8D

80%

•

60%

•

Efficiency

30

40%

-4D

-8D

25

-15D

20%

•

•

•

•

•

20

12

17

22

27

32

37

0%

Input Power, P

IN

(dBm)

ELECTRICAL CHARACTERISTICS

(T

C

NEZ7785-15D

NEZ7785-15DL

T-65

TYP MAX TEST CONDITIONS

V

DS

= 10V

f = 7.7 to 8.5 GHz

Zs = Z

L

= 50

Ω

6.0

7.0

V

DS

= 10V

f

1

= 8.49 GHz

f

2

= 8.50 GHz

Equal Tones

-45

-42

14.0

V

DS

= 2.5 V

4.0

9.2

TYP MAX MIN

36.5

38.5

33

1.1

7.0

1.5

8.0

TYP MAX MIN

39.5

41.5

31

2.2

6.5

3.0

7.5

42.5

30

4.4

6.0

η

ADD

I

DS

G

L

IM

3

-XDL

Option

Only

I

DSS

V

P

dBc

dBc

dBc

A

V

V

V

mS

mS

mS

V

V

V

°C/W

°C

20

1.0

-3.5

-45

-42

-45

-42

7.0

2.3

-2.0

3.5

-0.5

2.0

4.5

-3.5

-2.0

-0.5

-3.5

-2.2

-0.5

g

m

1300

2600

5200

22

20

5.0

6.0

48

22

20

2.5

3.0

48

22

1.3

1.5

60

BV

DGO

R

TH (Ch-C)

∆T

(CH-C)

Notes: 1. P

1DB

: Output Power at the 1dB Gain Compression Point. 2. SCL: Single Carrier Level. 3. Maximum Spec Applies to -XDL Option Only.

4.

∆T

(CH-C)

=

T

CH

- T

C

= 10 V

X

I

DSQ X

R

TH (CH-C) MAX.

California Eastern Laboratories

Power Added Efficiency,

η

ADD

(%)

-15D