C-BAND INTERNALLY
MATCHED POWER GaAs MESFET
FEATURES
•
HIGH P
OUT
18 W (42.5 dBm) Typ P
1dB
for NEZ3642-15D
9 W (39.5 dBm) Typ P
1dB
for NEZ3642-8D
4.5 W (36.5 dbm) Typ P
1dB
for NEZ3642-4D
HIGH EFFICIENCY
43%
ηadd
for 4.5W Device
40%
ηadd
for 9W Device
37%
ηadd
for 18W Device
LOW IMD
-45 dBc IM
3
@ 31.5 dBm Pout (S.C.L.) -15DL
-45 dBc IM
3
@ 29 dBm Pout (S.C.L.) -8DL
-45 dBc IM
3
@ 26 dBm Pout (S.C.L.) -4DL
CLASS A OPERATION
INTERNALLY MATCHED (IN/OUT)
INDUSTRY COMPATIBLE HERMETIC
PACKAGES
= 25°C)
NEZ3642-4D
NEZ3642-4DL
T-61
UNITS
dBm
dBm
dBm
%
A
dB
MIN
35.5
NEZ3642-8D
NEZ3642-8DL
T-61
TYP MAX
45
-15D
NEZ3642-15D
NEZ3642-15DL
NEZ3642-8D
NEZ3642-8DL
NEZ3642-4D
NEZ3642-4DL
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
100%
40
-8D
-4D
80%
P
OUT
•
35
Efficiency
30
60%
•
40%
25
20%
•
•
•
20
12
17
22
27
32
37
0%
Input Power, P
IN
(dBm)
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
1DB
CHARACTERISTICS
Output Power at P
IdB1
I
D
= 0.8A, RF Off
I
D
= 1.6A,RF Off
I
D
= 4.0A, RF Off
Power Added Efficiency @ P
1dB
Drain Current at P
1dB
Linear Gain
3rd Order Intermodulation
Distortion at
3
Pout = 26 dBm SCL
2
Pout = 29 dBm SCL
2
Pout = 31.5 dBm SCL
2
Saturated Drain Current
V
GS
= 0 V
Pinch Off Voltage
I
DS
= 15mA
I
DS
= 30mA
I
DS
= 60mA
Drain-Gate Breakdown Voltage
I
DG
= 15 mA
I
DG
= 30 mA
I
DG
= 60 mA
Transconductance
I
DS
= IA
I
DS
= 2A
I
DS
= 4A
Thermal Resistance
Channel to Case
Channel Temperature Rise
4
NEZ3642-15D
NEZ3642-15DL
T-65
MIN
TYP MAX
TEST CONDITIONS
V
DS
= 10V
f= 3.6
to 4.2 GHz
Zs = Z
L =
50 ohms
I
DSQ
= 0.5 X I
DSS
V
DS
= I0V
f
1
= 4.19 GHz
f
2
= 4.20 GHZ
2 Equal Tones
TYP MAX MIN
36.5
38.5
43
1.1
11.5
39.5
40
2.2
11.0
41.5 42.5
37
4.4
9.0 10.0
η
ADD
I
DS
G
L
IM
3
-X DL
Option
Only
I
DSS
V
P
1.5
10.0
3.0
6.0
10.0
dBc
dBc
dBc
A
V
V
V
V
V
V
mS
mS
mS
°C/W
°C
1.0
-3.5
-45
-42
-45
-42
-45
-42
14.0
2.3
-2.0
3.5
-0.5
2.0
4.5
7.0
4.0
9.2
V
DS
= 2.5 V
-4.0
-2.0
-0.5
-3.5
-2.2
-0.5
BV
DGO
20
22
20
22
20
1300
2600
5200
5.0
6.0
48
2.5
3.0
48
1.3
1.5
60
22
g
m
R
TH(CH-C)
∆T
(CH-C)
Notes:
1. P
1dB
: Ouptut Power at the 1dB Gain Compression Point
2. S.C.L.: Single Carrier Level
3. Maximum Spec applies to -XDL only.
4.
∆T
(CH-C)
= T
CH
- T
C
= 10 V x I
DSQ
x R
TH (CH - C) MAX
.
California Eastern Laboratories
Power Added Efficiency,
η
ADD
(%)
Output Power, P
OUT
(dBm)
CEL [ CALIFORNIA EASTERN LABS ]
