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NESG3033M14-T3-A 参数 Datasheet PDF下载

NESG3033M14-T3-A图片预览
型号: NESG3033M14-T3-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SILICON GERMANIUM RF TRANSISTOR]
分类和应用: 晶体晶体管光电二极管ISM频段放大器
文件页数/大小: 7 页 / 277 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG3033M14  
ELECTRICAL CHARACTERISTICS (TA = +25°C)  
Parameter  
DC Characteristics  
Symbol  
Test Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 5 V, IE = 0 mA  
100  
100  
380  
nA  
nA  
VEB = 1 V, IC = 0 mA  
VCE = 2 V, IC = 6 mA  
Note 1  
hFE  
220  
300  
RF Characteristics  
Insertion Power Gain  
Noise Figure  
S21e2 VCE = 2 V, IC = 15 mA, f = 2.0 GHz  
15.0  
17.5  
0.60  
dB  
dB  
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,  
NF  
0.85  
ZS = ZSopt, ZL = ZLopt  
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,  
Ga  
Associated Gain  
17.5  
dB  
ZS = ZSopt, ZL = ZLopt  
Note 2  
Reverse Transfer Capacitance  
Maximum Stable Power Gain  
Cre  
VCB = 2 V, IE = 0 mA, f = 1 MHz  
0.15  
20.5  
0.25  
pF  
dB  
MSGNote VCE = 2 V, IC = 15 mA, f = 2.0 GHz  
17.5  
3
VCE = 3 V, IC (set) = 20 mA,  
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt  
Gain 1 dB Compression Output Power  
PO (1 dB)  
12.5  
24.0  
dBm  
dBm  
3rd Order Intermodulation Distortion  
Output Intercept Point  
VCE = 3 V, IC (set) = 20 mA,  
OIP3  
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt  
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
S21  
3. MSG =  
S12  
hFE CLASSIFICATION  
Rank  
FB  
zL  
Marking  
hFE Value  
220 to 380  
3
Data Sheet PU10640EJ01V0DS