欢迎访问ic37.com |
会员登录 免费注册
发布采购

NESG3031M14-A 参数 Datasheet PDF下载

NESG3031M14-A图片预览
型号: NESG3031M14-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 9 页 / 548 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NESG3031M14-A的Datasheet PDF文件第1页浏览型号NESG3031M14-A的Datasheet PDF文件第2页浏览型号NESG3031M14-A的Datasheet PDF文件第4页浏览型号NESG3031M14-A的Datasheet PDF文件第5页浏览型号NESG3031M14-A的Datasheet PDF文件第6页浏览型号NESG3031M14-A的Datasheet PDF文件第7页浏览型号NESG3031M14-A的Datasheet PDF文件第8页浏览型号NESG3031M14-A的Datasheet PDF文件第9页  
NESG3031M14  
TYPICAL CHARACTERISTICS (TA = 25ºC, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
250  
200  
150  
100  
0.3  
Mounted on glass epoxy PWB  
f = 1 MHz  
(1.08 cm2 × 1.0 mm (t))  
0.2  
0.1  
50  
0
25  
50  
75  
100  
125  
150  
1.0  
1.0  
0
2
4
6
8
10  
Ambient Temperature TA (ºC)  
Collector to Base Voltage VCB (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
100  
10  
VCE = 1 V  
VCE = 2 V  
1
1
0.1  
0.1  
0.01  
0.01  
0.001  
0.0001  
0.00001  
0.001  
0.0001  
0.00001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage VBE (V)  
Base to Emitter Voltage VBE (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
100  
10  
40  
30  
20  
10  
VCE = 3 V  
200 A  
µ
180 A  
µ
160  
140  
120  
100  
80  
µ
µ
µ
µ
µ
A
A
A
A
A
1
0.1  
0.01  
60  
40  
µ
µ
µ
A
A
A
0.001  
0.0001  
0.00001  
IB = 20  
4
0
1
2
3
5
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
Base to Emitter Voltage VBE (V)  
Collector to Emitter Voltage VCE (V)  
Remark The graphs indicate nominal characteristics.  
3